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| Previous Datasheet Index Next Data Sheet PD - 9.1130 IRGBC20K-S INSULATED GATE BIPOLAR TRANSISTOR Features * Short circuit rated - 10s @ 125C, V GE = 15V * Switching-loss rating includes all "tail" losses * Optimized for high operating frequency (over 5kHz) See Fig. 1 for Current vs. Frequency curve G E C Short Circuit Rated UltraFast Fast IGBT VCES = 600V VCE(sat) 3.5V @VGE = 15V, I C = 6.0A n-channel Description Insulated Gate Bipolar Transistors (IGBTs) from International Rectifier have higher usable current densities than comparable bipolar transistors, while at the same time having simpler gate-drive requirements of the familiar power MOSFET. They provide substantial benefits to a host of high-voltage, highcurrent applications. These new short circuit rated devices are especially suited for motor control and other applications requiring short circuit withstand capability. SMD-220 Max. 600 10 6.0 20 20 10 20 5.0 60 24 -55 to +150 Absolute Maximum Ratings Parameter VCES IC @ T C = 25C IC @ T C = 100C ICM ILM tsc VGE EARV PD @ T C = 25C PD @ T C = 100C TJ TSTG Collector-to-Emitter Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Short Circuit Withstand Time Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 sec. Mounting torque, 6-32 or M3 screw. Units V A s V mJ W C 300 (0.063 in. (1.6mm) from case) 10 lbf*in (1.1N*m) Thermal Resistance Parameter RJC RJA RJA Wt Junction-to-Case Junction-to-Ambient (PCB mount)** Junction-to-Ambient, typical socket mount Weight Min. -- -- -- -- Typ. -- -- -- 2 (0.07) Max. 2.1 40 80 -- Units C/W g (oz) ** When mounted on 1" square PCB (FR-4 or G-10 Material) For recommended footprint and soldering techniques refer to application note #AN-994. Revision 1 C-855 To Order Previous Datasheet Index Next Data Sheet IRGBC20K-S Electrical Characteristics @ T V(BR)CES V(BR)ECS V(BR)CES/TJ J = 25C (unless otherwise specified) Min. Typ. Max. Units Conditions 600 -- -- V VGE = 0V, I C = 250A 20 -- -- V VGE = 0V, IC = 1.0A -- 0.37 -- V/C VGE = 0V, I C = 1.0mA -- 2.4 3.5 IC = 6.0A V GE = 15V -- 3.6 -- V IC = 10A See Fig. 2, 5 -- 2.9 -- IC = 6.0A, T J = 150C 3.0 -- 5.5 VCE = VGE, IC = 250A -- -11 -- mV/C VCE = VGE, IC = 250A 1.9 3.3 -- S VCE = 100V, I C = 6.0A -- -- 250 A VGE = 0V, V CE = 600V -- -- 1000 VGE = 0V, V CE = 600V, T J = 150C -- -- 100 nA VGE = 20V VCE(on) Parameter Collector-to-Emitter Breakdown Voltage Emitter-to-Collector Breakdown Voltage Temp. Coeff. of Breakdown Voltage Collector-to-Emitter Saturation Voltage VGE(th) VGE(th)/TJ gfe ICES IGES Gate Threshold Voltage Temperature Coeff. of Threshold Voltage Forward Transconductance Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Switching Characteristics @ T Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets tsc td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Repetitive rating; V GE=20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC=80%(V CES), VGE=20V, L=10H, R G= 50, ( See fig. 13a ) J = 25C (unless otherwise specified) Min. -- -- -- -- -- -- -- -- -- -- 10 -- -- -- -- -- -- -- -- -- Typ. Max. Units 17 26 4.3 6.8 nC 6.4 11 29 -- 18 -- ns 58 90 120 195 0.11 -- 0.13 -- mJ 0.24 0.31 -- -- s 28 22 200 145 0.50 7.5 360 45 4.7 -- -- -- -- -- -- -- -- -- Conditions IC = 6.0A VCC = 400V See Fig. 8 VGE = 15V TJ = 25C IC = 6.0A, V CC = 480V VGE = 15V, R G = 50 Energy losses include "tail" See Fig. 9, 10, 11, 14 VCC = 360V, T J = 125C VGE = 15V, R G = 50, VCPK < 500V TJ = 150C, IC = 6.0A, V CC = 480V VGE = 15V, R G = 50 Energy losses include "tail" See Fig. 10, 14 Measured 5mm from package VGE = 0V VCC = 30V See Fig. 7 = 1.0MHz Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Short Circuit Withstand Time Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance ns mJ nH pF Repetitive rating; pulse width limited by maximum junction temperature. Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. C-856 To Order Previous Datasheet Index Next Data Sheet IRGBC20K-S 15 F o r b o th : T ria n g u la r w a v e : 12 Load Current (A) D u ty c yc le : 5 0 % TJ = 1 2 5 C T s ink = 9 0 C G a te d riv e a s s p e c ifie d P o w e r D is s ip a tio n = 1 4 W C la m p v o lta g e : 8 0 % o f ra te d 9 S q u a re w a v e : 6 0% o f ra te d v o lta g e 6 3 Ide al d iod es 0 0.1 1 10 A 100 f, Frequency (kHz) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=I PK) 100 100 I C , C ollector-to-E mitte r C urren t (A ) TJ = 2 5 C 10 TJ = 1 50 C I C , C ollec tor-to -E m itter C u rre nt (A ) 10 T J = 15 0C TJ = 25 C 1 0.1 0.1 1 V G E = 15V 2 0 s P U LS E W ID TH 10 1 5 10 V C C = 1 00 V 5 s P UL S E W ID TH 15 20 V C E , C o llector-to-Em itter V oltage (V) V G E , G ate-to-E m itter V olta g e (V ) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics C-857 To Order Previous Datasheet Index Next Data Sheet IRGBC20K-S 10 8 V C E , C o lle c to r-to -E m itte r V o lta g e (V ) V G E = 1 5V 5.0 M aximu m D C C olle ctor Cu rrent (A ) V G E = 1 5V 8 0 s P U LS E W ID TH 4.0 I C = 1 2A 6 3.0 4 IC = 6.0A 2.0 2 I C = 3.0 A 0 25 50 75 100 125 150 1.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 T C , C ase Tem perature (C ) T C , C as e Te m p e ra ture (C ) Fig. 4 - Maximum Collector Current vs. Case Temperature Fig. 5 - Collector-to-Emitter Voltage vs. Case Temperature 10 T herm al Response (Z thJ C ) 1 D = 0.50 0 .2 0 0 .10 0.0 5 PD M 0.1 0.0 2 0 .01 t SIN G LE P U LS E (TH ER M AL R E SP O N SE ) N o te s : 1 . D u ty fa c to r D = t 1 /t 2 1 t2 0.01 0.00001 2 . P e a k TJ = P D M x Z th J C + T C 0.0001 0.001 0.01 0.1 1 10 t 1 , R ectangular Pulse D uration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case C-858 To Order Previous Datasheet Index Next Data Sheet IRGBC20K-S 700 600 C, C apacitance (pF) 500 Cies Coes 400 300 VG E , G ate -to-E mitter V oltage (V ) 1 00 V GE = 0V, f = 1MHz C ies = C ge + C gc , C ce SHORTED C res = C gc C oes = C ce + C gc 20 V C E = 4 80 V I C = 6.0 A 16 12 8 200 Cres 100 4 0 1 10 0 0 4 8 12 16 20 V C E , C o llector-to-Em itter V oltage (V) Q g , Total G ate C harge (nC ) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.26 Total Switching Losses (mJ) Total Switching Losses (mJ) 0.25 VCC VGE TC IC = 480V = 15V = 25C = 6.0A 10 RG = 50 V GE = 15V V CC = 480V I C = 12A 0.24 1 I C = 6.0A I C = 3.0A 0.1 0.23 0.22 0.21 0.20 0 10 20 30 40 50 60 0.01 -60 -40 -20 0 20 40 60 80 A 100 120 140 160 R G , Gate Resistance () W TC, Case Temperature (C) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Case Temperature C-859 To Order Previous Datasheet Index Next Data Sheet IRGBC20K-S 1.4 1.2 1.0 I , C o lle c to r-to -E m itte r C u rre n t (A ) Total Switching Losses (mJ) RG TC V CC V GE = 50 = 150C = 480V = 15V 100 VG E E 2 0V G= T J = 12 5C 10 S A FE O P E RA TIN G A RE A 0.8 0.6 1 0.4 0.0 0 2 4 6 8 10 12 A 14 C 0.1 1 10 100 1000 0.2 I C , Collector-to-Emitter Current (A) V C E , C o lle cto r-to-E m itte r V olta g e (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA Refer to Section D for the following: Appendix C: Section D - page D-5 Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit Fig. 14a - Switching Loss Test Circuit Fig. 14b - Switching Loss Waveform Package Outline 2 - SMD-220 Section D - page D-12 C-860 To Order |
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